1 n-channel 20 v (d-s) mosfet features ? halogen-free acc ording to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compl iant to rohs directive 2002/95/ec applications ? dc/dc converters ? load switch for portable applications product summary v ds (v) r ds(on) ( ) i d (a ) e q g (t yp.) 20 0.033 at v gs = 4.5 v 3.8 8.8 nc 0.045 at v gs = 2.5 v 3.6 0.051 at v gs = 1.8 v 2.6 g s d t op v ie w 2 3 sot -23 1 notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 125 c/w. e. based on t c = 25 c . absolute maximum ratings t a = 25 c, unless otherwise noted pa rameter symbol limit unit drain-source voltage v ds 20 v gat e -source voltage v gs 8 contin uous d rain current (t j = 150 c ) t c = 25 c i d 3.8 a t c = 70 c 3.1 t a = 25 c 3.8 t a = 70 c 3 pulsed dr a in current i dm 20 continuous sou rce-drain diode current t c = 25 c i s 1.75 t a = 25 c 1.04 b, c max i mum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.3 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c ope r ating junction and storage temperature range t j , t stg - 55 to 150 c solder in g recommendations (peak temperature) 260 thermal resist ance ratings p aramet er symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thj a 80 100 c /w maximum junction-to-foot (drain) steady state r thjf 40 60 dt 6 www.din-tek.jp
2 no t es: a. pulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted p aram eter symbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = 250 a 20 v v ds t emper ature coefficient ' v ds /t j i d = 250 a 25 mv/c v gs( t h) t emperature co efficient ' v gs(t h) /t j - 2. 6 gate-s ource threshold voltage v gs( t h) v ds = v gs , i d = 250 a 0.45 1.0 v gate-s ource leakage i gss v ds = 0 v , v gs = 8 v 100 na z ero gate voltage drain current i dss v ds = 20 v , v gs = 0 v 1 a v ds = 20 v , v gs = 0 v , t j = 70 c 10 on-state drain current a i d( on ) v ds d 5 v , v gs = 4.5 v 20 a drain-source on-state re sista nce a r ds( o n) v gs 4.5 v , i d = 3.8 a 0.0265 0.033 : v gs 2.5 v , i d = 3.6 a 0.0396 0.045 v gs 1.8 v , i d = 2.6 a 0.0445 0.051 f orward transconductance a g fs v ds = 10 v , i d = 3.8 a 24 s dynam ic b input capacita nce c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 865 pf output capacitance c oss 105 re verse transfer capacitance c rss 55 t o tal gate charge q g v ds = 1 0 v, v gs = 5 v, i d = 5.0 a 12 18 nc v ds = 10 v , v gs = 4.5 v , i d = 5.0 a 8.8 14 gate-s ource charge q gs 1.1 gate- dr ain charge q gd 0.7 g a te resistance r g f = 1 mhz 0.5 2.4 4.8 : tu r n - o n d e l ay t i m e t d(o n ) v dd = 10 v , r l = 2.2 : i d # 4 a, v gen = 4.5 v , r g = 1 : 81 6 ns rise time t r 17 26 t urn-off delay time t d(o f f) 31 47 fa ll time t f 81 6 tu r n - o n d e l ay t i m e t d(o n ) v dd = 10 v , r l = 2.2 : i d # 4 a, v gen = 5 v , r g = 1 : 51 0 rise time t r 13 20 t urn-off delay time t d(o f f) 21 32 fa ll time t f 61 2 drain - source body diode characteristics continuous source-drain diode current i s t c = 2 5 c 1.75 a pulse diode forward current i sm 20 body diode v o ltage v sd i s = 4 a, v gs 0 v 0.75 1.2 v body diode reverse recovery time t rr i f = 4 a, di/dt = 100 a/s, t j = 25 c 12 20 ns body diode reverse recovery charge q rr 51 0 nc reverse recovery fall time t a 7 ns re v erse recovery rise time t b 5 ' 7 6 z z z g l q w h n m s
3 typica l c haracteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 v gs =5vt h ru2v v gs =1 . 5v v gs =1v v ds - drain -to-source voltage (v) - drain current (a) i d 0.020 0.025 0.030 0.035 0.040 0.045 0 5 10 15 20 v gs =1 . 8v v gs =4 . 5v v gs =2 . 5v - on- resistance ( ) r d s( on) i d - drain current (a) 0 1 2 3 4 5 0 2468 10 v ds =1 6v i d =3a v ds =1 0v v ds =5v - gate - to-source voltage (v) q g - t otal gate charge (nc) v gs transfer cha r acteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0 .3 0.6 0.9 1.2 1.5 t c = 25 c t c =1 2 5 c t c = - 55 c v gs - gate -to-source voltage (v) - drain current (a) i d c rss 0 300 600 900 1200 0 5 10 15 20 c is s c oss v ds - drain -to-source voltage (v) c - capacitance (pf) 0.70 0.95 1.20 1.45 1.70 - 50 - 25 0 25 50 75 100 125 150 v gs = 2 .5 v, i = 2.7 a v gs =4 . 5v,i d =3.8 a t j - junction temperature (c) (normalized) - on - resistance r ds (o n) d dt 6 www.din-tek.jp
4 ty pi cal characteristics 25 c, unless otherwise noted so urce- drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source -to-drain voltage (v) - source current (a) i s 0.1 0.3 0.5 0.7 0.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs( t h) t j - t emperature (c) on-resista n ce vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.02 0.03 0.04 0.05 0.06 024 68 t j =2 5 c i d =3a t j = 125 c - on - resistance ( ) r ds (o n) v gs - gate -to-source voltage (v) 0 8 16 24 32 0.001 0.01 0.1 1 10 100 time (s) power (w) safe op eratin g area, junction-to-ambient 10 1 0.1 1 10 100 0.01 3 0.1 t a = 25 c single pulse 100 m s limited by r ds (on) * bvdss limited 1ms 100 s 10 ms 1s ,1 0s dc v ds - drain -to-source voltage (v) *v gs > minimum v gs at which r ds (on) is specified - drain current (a) i d dt 6 www.din-tek.jp
5 typica l c haracteristics 25 c, unless otherwise noted * th e power dissip ation p d is based on t j( m ax.) = 15 0 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 0.5 1 2 3 4 0 2 55075100125150 package limited t c - case temperature (c) i d - drain current (a) pow e r derating, junction-to-foot 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t c - case temperature (c) power (w) po we r derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w) dt 6 www.din-tek.jp
6 ty pi cal characteristics 25 c, unless otherwise noted norm alized t hermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 10 000 10 -1 10 -4 100 0.2 0.1 square w ave pulse duration (s) normalized ef fective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 1 25 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. sur face mounted d u ty cycle = 0.5 single pulse 0.02 0.05 1000 no r malized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 square wave pulse duration (s) normalized ef fective transient thermal impedance 1 0.1 0.05 single pulse 0.02 dt 6 www.din-tek.jp
1 sot-23 (t o-236): 3-l ead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 3 5 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0 3 46 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0748 ref l 0 .40 0.60 0.016 0.024 l 1 0.64 ref 0. 025 ref s 0.5 0 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
1 application note recommende d minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index re tu rn to index application note www.din-tek.jp
1 disclaimer all pro duct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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